Volume 1, Issue 3, August 2013, Page: 55-60
By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool
Christian Kwaku Amuzuvi, University of Mines and Technology, Department of Electrical and Electronic Engineering, Tarkwa, Ghana; Photonic and Radio Frequency Engineering Group (PRFEG), Electrical Systems and Optics Research Division, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
Seth Ofori, University of Mines and Technology, Department of Electrical and Electronic Engineering, Tarkwa, Ghana
Received: Jul. 15, 2013;       Published: Aug. 20, 2013
DOI: 10.11648/j.jeee.20130103.11      View  3185      Downloads  175
Abstract
In this paper, Barlase has been taken a step further by emulating the degradation processes in high power semiconductor laser bars to further deepen the understanding of the behaviour of laser bars. In publications elsewhere where Barlase was used, investigations were done using hypothetical laser bars to emulate various degradation processes commonly found in the operations of lasers. In this paper however, the emulation of a real laser bar is being investigated to compare experimental results to the emulated results to establish a correlation between them. The results established show a close matching between the experimental and the emulated results but the levels of change were not similar. The reason for this can be attributed to the thermal properties used in Barlase and that the consideration of a global thermal solver will be necessary to improve upon the mismatch between the experimental and emulated results.
Keywords
By-Emitter, Calibration, Tapered Laser Bar, Heatsink Temperature, Electroluminescence, Emitter, Degradation, Near Infra-Red, Trap Density
To cite this article
Christian Kwaku Amuzuvi, Seth Ofori, By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool, Journal of Electrical and Electronic Engineering. Vol. 1, No. 3, 2013, pp. 55-60. doi: 10.11648/j.jeee.20130103.11
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